2N5551TA Fairchild Semiconductor, 2N5551TA Datasheet - Page 4

• Manufacturer Part Number: 2N5551TA
• Description: AMP GP NPN 160V 600MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5551TA

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 160V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 160 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2N5551 / MMBT5551 Rev. B1
© 2009 Fairchild Semiconductor Corporation
Typical Performance Characteristics (Continued)
Figure 7. Collector- Emitter Breakdown Voltage
260
240
220
200
180
160
700
600
500
400
300
200
100
0
0.1
0
with Resistance Between Emitter-Base
SOT-23
Figure 7. Power Dissipation
Between Emitter-Base
25
1
vs Ambient Temperature
RESISTANCE (k )
TEMPERATURE ( C)
50
TO-92
10
75
Ω
100
o
I
C
100
= 1.0 mA
125
1000
150
4
16
12
8
4
0
Figure 8. Small Signal Current Gain
1
FREG = 20 MHz
V
CE
= 10V
I - COLLECTOR CURRENT (mA)
vs Collector Current
C
vs Collector Current
10
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50