BGA2011 T/R NXP Semiconductors, BGA2011 T/R Datasheet - Page 8

• Manufacturer Part Number: BGA2011 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFS
• Manufacturer: NXP Semiconductors
• Type: Low Noise Wideband Amplifierr

Specifications of BGA2011 T/R

• Operating Frequency: 0.9 GHz
• Noise Figure: 1.5 dB
• Operating Supply Voltage: 3 V
• Supply Current: 15 mA
• Maximum Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA2011,115

NXP Semiconductors
2000 Dec 04
handbook, full pagewidth
handbook, full pagewidth
900 MHz high linear low noise amplifier
I
I
C
C
= 15 mA; V
= 15 mA; V
S
S
= V
= V
C
C
= 3 V; P
= 3 V; P
Fig.10 Common emitter reverse transmission coefficient (s
Fig.11 Common emitter output reflection coefficient (s
D
D
= 30 dBm; Z
= 30 dBm; Z
180°
180°
20
0
−135°
−135°
o
o
−0.2
+0.2
135°
135°
16
= 50 
= 50 
0.2
12
+0.5
−0.5
900 MHz
8
0.5
4
3 GHz
100 MHz
−90°
−90°
90°
+1
−1
90°
8
1
100 MHz
3 GHz
2
+2
−2
5
22
−45°
−45°
45°
45°
); typical values.
12
+5
−5
MLD489
); typical values.
MLD488
0°
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
BGA2011