BGA2011 T/R NXP Semiconductors, BGA2011 T/R Datasheet - Page 4

• Manufacturer Part Number: BGA2011 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFS
• Manufacturer: NXP Semiconductors
• Type: Low Noise Wideband Amplifierr

Specifications of BGA2011 T/R

• Operating Frequency: 0.9 GHz
• Noise Figure: 1.5 dB
• Operating Supply Voltage: 3 V
• Supply Current: 15 mA
• Maximum Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA2011,115

NXP Semiconductors
APPLICATION INFORMATION
List of components (see Fig.2)
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (
2000 Dec 04
handbook, full pagewidth
C1, C2
C3, C5
C4
C6
L1
L2
COMPONENT
900 MHz high linear low noise amplifier
board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m.
RF in
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD inductor
SMD inductor
V C
C1
DESCRIPTION
L1
C6
V C
C5
IN
SOT363
CIRCUIT
BIAS
Fig.2 Application circuit.
stripline
V S
APPLICATION
4
GND
TYPICAL
OUT
100 pF
5.6 pF
22 nF



C4
L2
C2
C3
APPLICATION
2 x 100 nF
HIGH IP3
V S
RF out
MLD480
100 pF
8.2 nH
5.6 pF
10 nH
22 nF
r
= 6.15),
Product specification
DIMENSIONS
BGA2011
0603
0603
0603
0805
0603
0603