BGA2011 T/R NXP Semiconductors, BGA2011 T/R Datasheet - Page 5

• Manufacturer Part Number: BGA2011 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFS
• Manufacturer: NXP Semiconductors
• Type: Low Noise Wideband Amplifierr

Specifications of BGA2011 T/R

• Operating Frequency: 0.9 GHz
• Noise Figure: 1.5 dB
• Operating Supply Voltage: 3 V
• Supply Current: 15 mA
• Maximum Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA2011,115

NXP Semiconductors
2000 Dec 04
handbook, halfpage
handbook, halfpage
900 MHz high linear low noise amplifier
I
f = 900 MHz; V
C
= 15 mA; V
s 21
(dB)
gain
(dB)
Fig.5
Fig.3
30
20
10
20
15
10
0
2
5
0
10
0
−3
S
Insertion gain as a function of control
current; typical values.
Insertion gain (s
functions of frequency; typical values.
S
= V
= 4 V; P
C
= 3 V; P
s 21
G max
1000
D
2
= 30 dBm.
D
= 30 dBm; Z
10
−2
21

2
2000
) and G
o
I C (mA)
= 50 
f (MHz)
max
MLD481
MLD483
as
3000
10
−1
5
handbook, halfpage
handbook, halfpage
f = 900 MHz; V
V
Fig.4
IP3 out
S
(dBm)
Fig.6
= V
gain
(dB)
20
15
10
15
10
C
5
0
5
0
= 3 V; P
0
5
Insertion gain and supply current as
functions of control voltage; typical values.
Output and input 3rd order intercept point
as a function of supply current;
typical application; typical values.
S
D
= 3 V; P
= 30 dBm (both tones); f = 900 MHz; f = 100 kHz.
IP3 out
IP3 in
D
1
= 30 dBm.
10
s 21
I S
I S
2
2
I S (mA)
Product specification
V C (V)
BGA2011
MLD482
MLD484
15
3
0
−5
−10
−15
20
15
10
5
0
(mA)
(dBm)
IP3 in
I S