KST3904MTF Fairchild Semiconductor, KST3904MTF Datasheet
KST3904MTF
Manufacturer Part Number
KST3904MTF
Description
TRANSISTOR NPN 40V 200MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.KST3904MTF.pdf
(4 pages)
Specifications of KST3904MTF
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
350mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
350 mW
Maximum Operating Frequency
300 MHz
Dc Collector/base Gain Hfe Min
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KST3904MTF
Manufacturer:
FSC
Quantity:
6 000
©2002 Fairchild Semiconductor Corporation
General Purpose Transistor
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: Pulse Width 300 s, Duty Cycle 2%
V
V
V
I
P
T
BV
BV
BV
I
h
V
V
C
f
NF
t
t
C
CEX
T
ON
OFF
FE
CBO
CEO
EBO
C
STG
Symbol
CE
BE
ob
CBO
CEO
EBO
(sat)
(sat)
Symbol
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Turn On Time
Turn Off Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
Marking
KST3904
1 A
I
I
I
V
V
V
V
V
V
I
I
I
I
V
V
I
f=10Hz to 15.7KHz
V
I
V
I
C
C
E
C
C
C
C
C
C
B1
CE
CE
CE
CE
CE
CE
CB
CE
CC
CC
=10 A, I
=1mA, I
=10 A, I
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=100 A, V
=10mA, I
=I
=30V, V
=1V, I
=1V, I
=1V, I
=1V, I
=1V, I
=5V, I
=20V, I
=3V, V
=3V, I
B2
=1mA
Test Condition
B
C
C
C
C
C
E
C
C
E
BE
=0
B
B
B
B
=0, f=1MHz
C
B1
=0.1mA
=1mA
=10mA
=50mA
=100mA
=10mA,
=0
=0
EB
=1mA
=5mA
=1mA
=5mA
=10mA, f=100MHz
CE
=0.5V
=1mA
=3V
=5V, R
S
=1K
1. Base 2. Emitter 3. Collector
3
Value
200
350
150
60
40
6
Min.
0.65
100
300
60
40
40
70
60
30
6
1
SOT-23
Max.
0.85
0.95
300
250
0.2
0.3
50
70
4
5
Rev. A1, November 2002
2
Units
mW
mA
V
V
V
C
Units
MHz
nA
pF
dB
ns
ns
V
V
V
V
V
V
V
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KST3904MTF Summary of contents
Page 1
... Base-Emitter Saturation Voltage BE C Output Capacitance ob f Current Gain-Bandwidth Product T NF Noise Figure t Turn On Time ON Turn Off Time t OFF * Pulse Test: Pulse Width 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KST3904 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = =1mA, I ...
Page 2
... Typical Characteristics 240 200 160 120 0 [A], COLLECTOR CURRENT C Figure 1. DC current Gain [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Output Capacitance ©2002 Fairchild Semiconductor Corporation 0.1 0.01 10 100 0.1 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 1MHz 100 10 0.1 100 Figure 4. Current Gain Bandwidth Product ...
Page 3
... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A1, November 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...