FJP13009H2TU Fairchild Semiconductor, FJP13009H2TU Datasheet

TRANSISTOR NPN 400V 12A TO-220

FJP13009H2TU

Manufacturer Part Number
FJP13009H2TU
Description
TRANSISTOR NPN 400V 12A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FJP13009H2TU

Transistor Type
NPN
Current - Collector (ic) (max)
12A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 3A, 12A
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 5A, 5V
Power - Max
100W
Frequency - Transition
4MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

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©2007 Fairchild Semiconductor Corporation
FJP13009 Rev. B
FJP13009
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Package Marking and Ordering Information
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.
V
V
V
I
I
I
P
T
T
Device Item
FJP13009
FJP13009H2TU
FJP13009TU
C
CP
B
J
STG
CBO
CEO
EBO
C
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature Range
(notes_2)
Device Marking
J13009
J130092
J13009
Parameter
C
= 25°C)
T
C
1.Base
= 25°C unless otherwise noted
1
Package
2.Collector
TO-220
TO-220
TO-220
TO-220
1
3.Emitter
(notes_1)
Packing Method
-65 ~ 150
Value
TUBE
TUBE
Bulk
700
400
100
150
12
24
9
6
Qty(pcs)
March 2007
Units
www.fairchildsemi.com
1,200
1,000
1,000
°C
°C
W
V
V
V
A
A
A

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FJP13009H2TU Summary of contents

Page 1

... Package Marking and Ordering Information Device Item Device Marking (notes_2) FJP13009 J13009 FJP13009H2TU J130092 FJP13009TU J13009 Notes_2 : 1) The Affix “-H2” means the hFE classification. 2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging. ...

Page 2

Electrical Characteristics Symbol Parameter V (sus) Collector-Emitter Sustaining Voltage CEO I Emitter Cut-off Current EBO Current Gain FE V (sat) * Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE C Output Capacitance ob f ...

Page 3

Typical Performance Characteristics 100 [A], COLLECTOR CURRENT C Figure 1. DC current Gain 1000 100 [V], COLLECTOR BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10000 t STG 1000 ...

Page 4

Typical Performance Characteristics 100 10 1 0.1 0.01 10 100 V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 7. Reverse Bias Safe Operating Area FJP13009 Rev. B (Continued) 120 Vcc=50V, I =1A - 100 L = 1mH 80 ...

Page 5

Mechanical Dimensions FJP13009 Rev. B TO-220 ±0.20 9.90 (8.70) ø3.60 ±0.10 ±0.10 ±0.10 1.27 1.52 ±0.10 0.80 2.54TYP 2.54TYP [2.54 ±0.20 ] [2.54 ±0.20 ] ±0.20 10.00 5 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 ±0.20 2.40 –0.05 Dimensions in ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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