BD681S Fairchild Semiconductor, BD681S Datasheet - Page 2

• Manufacturer Part Number: BD681S
• Description: TRANSISTOR NPN 100V 4A TO-126
• Manufacturer: Fairchild Semiconductor

Specifications of BD681S

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
• Current - Collector Cutoff (max): 500µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 1.5A, 3V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-126-3
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage(max): 100V
• Emitter-base Voltage (max): 5V
• Collector-emitter Saturation Voltage: 2.5@30mA@1.5AV
• Collector Current (dc) (max): 4A
• Dc Current Gain: 750@1.5A@3V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-126
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10000
1000
100
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
0
Figure 3. Base-Emitter On Voltage
25
Figure 1. DC current Gain
Figure 5. Power Derating
V
BE
I
C
50
[V], BASE-EMITTER VOLTAGE
T
[A], COLLECTOR CURRENT
C
[
o
C], CASE TEMPERATURE
75
100
1
125
V
150
CE
= 3V
V
CE
175
= 3V
200
10
Figure 2. Collector-Emitter Saturation Voltage
0.1
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
1
0.1
1
I
I
C
C
(max). Pulsed
(max). Continuous
Figure 4. Safe Operating Area
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
10
BD675A
BD677A
BD679A
BD681
1
100
100 s
10 s
1ms
10ms
Ic = 250 I
10
Rev. A, February 2000
B
1000