2N4402BU Fairchild Semiconductor, 2N4402BU Datasheet
2N4402BU
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2N4402BU Summary of contents
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... These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC Thermal Resistance, Junction to Ambient R JA 2001 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 5.0 V 600 ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CEX I Base Cutoff Current BL ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...
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Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...
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Typical Characteristics Switching Times vs Collector Current 250 200 150 100 100 I - COLLECTOR ...
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Typical Common Emitter Characteristics Common Emitter Characteristics 0.5 0.2 0 COLLECTOR CURRENT (mA) C Common Emitter Characteristics 1 -10mA 1.4 V 1.3 1.2 1.1 h ...
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Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit NOTE 5.0 V EBO 0 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit PNP General Purpose Amplifier 1 1.5 V ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...