2N4401BU Fairchild Semiconductor, 2N4401BU Datasheet - Page 2
![IC TRANS NPN SS GP 600MA TO-92](/photos/5/68/56870/2n4401bu_sml.jpg)
2N4401BU
Manufacturer Part Number
2N4401BU
Description
IC TRANS NPN SS GP 600MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N4401TAR.pdf
(7 pages)
Specifications of 2N4401BU
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
625mW
Frequency - Transition
250MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N4401
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N4401BU
Manufacturer:
FSC
Quantity:
32 681
Part Number:
2N4401BU
Manufacturer:
ON/安森美
Quantity:
20 000
V
V
V
I
I
h
V
V
f
C
C
h
h
h
h
t
t
t
t
ON CHARACTERISTICS*
Symbol
OFF CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
BL
CEX
T
d
r
s
f
FE
ie
re
fe
oe
(BR)CEO
(BR)CBO
(BR)EBO
CE(
BE(
cb
eb
*
Electrical Characteristics
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
)
)
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
TA = 25°C unless otherwise noted
I
I
I
V
V
I
I
I
I
I
I
I
I
I
I
f = 100 MHz
V
f = 140 kHz
V
f = 140 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
I
f = 1.0 kHz
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
BE
CC
CC
= 1.0 mA, I
= 0.1 mA, I
= 0.1 mA, I
= 0.1 mA, V
= 1.0 mA, V
= 10 mA, V
= 150 mA, V
= 500 mA, V
= 150 mA, I
= 500 mA, I
= 150 mA, I
= 500 mA, I
= 20 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 1.0 mA, V
= 150 mA, I
= I
= 35 V, V
= 35 V, V
= 5.0 V, I
= 0.5 V, I
= 30 V, V
= 30 V, I
Test Conditions
B2
= 15 mA
C
C
B
E
E
C
EB
EB
CE
CE
EB
B
B
B
B
B1
CE
CE
CE
CE
CE
CE
= 150 mA
= 0
= 0
CE
CE
= 0,
= 0,
= 0
= 15 mA
= 50 mA
= 15 mA
= 50 mA
= 0.4 V
= 0.4 V
= 1.0 V
= 10 V,
= 2 V,
= 15 mA
NPN General Purpose Amplifier
= 1.0 V
= 1.0 V
= 10 V,
= 10 V,
= 10 V,
= 10 V,
= 1.0 V
= 2.0 V
Min
0.75
100
250
6.0
1.0
0.1
1.0
40
60
20
40
80
40
40
Max
0.75
0.95
300
500
225
0.1
0.1
0.4
1.2
6.5
8.0
30
15
30
15
20
30
(continued)
Units
x 10
MHz
mhos
k
pF
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
A
A
-4
3