MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 78

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MT29F2G16ABBEAH4-IT:E

Manufacturer Part Number
MT29F2G16ABBEAH4-IT:E
Description
128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
Manufacturer
Micron Technology Inc
Datasheet

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Table 16: Block Lock Address Cycle Assignments
Figure 57: UNLOCK Operation
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
ALE Cycle
First
Second
Third
I/O[15:8]
LOW
LOW
LOW
Notes:
1
WE#
R/B#
BA15
LOW
I/Ox
WP#
CE#
ALE
RE#
I/O7
CLE
BA7
1. I/O[15:8] is applicable only for x16 devices.
2. Invert area bit is applicable for 24h command; it may be LOW or HIGH for 23h command.
Unlock
BA14
LOW
I/O6
BA6
23h
add 1
Block
BA13
LOW
LOW
I/O5
Lower boundary
add 2
Block
78
BA12
LOW
LOW
I/O4
Block
add 3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
BA11
LOW
LOW
I/O3
24h
BA10
LOW
LOW
I/O2
add 1
Block
Upper boundary
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature
add 2
Block
BA17
LOW
I/O1
BA9
add 3
Block
Invert area bit
BA16
I/O0
BA8
2

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