MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 77
MT29F2G16ABBEAH4-IT:E
Manufacturer Part Number
MT29F2G16ABBEAH4-IT:E
Description
128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F2G16ABBEAH4-ITE.pdf
(125 pages)
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Figure 55: Flash Array Protected: Invert Area Bit = 0
Figure 56: Flash Array Protected: Invert Area Bit = 1
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Block 2047
Block 2046
Block 2045
Block 2044
Block 2043
Block 2042
Block 2041
Block 2040
Block 2039
Block 0002
Block 0001
Block 0000
Block 2047
Block 2046
Block 2045
Block 2044
Block 2043
Block 2042
Block 2041
Block 2040
Block 2039
Block 0002
Block 0001
Block 0000
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
. .
7FCh
7FCh
7F8h
7F8h
Upper block boundary
Lower block boundary
Upper block boundary
Lower block boundary
77
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
Unprotected
Protected
Protected
Unprotected
Protected
Unprotected
area
area
area
Area
area
area
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature
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