MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 31
MT29F2G16ABBEAH4-IT:E
Manufacturer Part Number
MT29F2G16ABBEAH4-IT:E
Description
128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F2G16ABBEAH4-ITE.pdf
(125 pages)
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Table 6: Two-Plane Command Set (Continued)
Note 4 applies to all parameters and conditions
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Command
PROGRAM PAGE
TWO-PLANE
PROGRAM PAGE
CACHE MODE TWO-
PLANE
PROGRAM FOR TWO-
PLANE INTERNAL DA-
TA MOVE
BLOCK ERASE TWO-
PLANE
Notes:
Cycle #1
mand
Com-
80h
80h
85h
60h
1. Do not cross plane boundaries when using READ FOR INTERNAL DATA MOVE TWO-
2. The RANDOM DATA READ TWO-PLANE command is limited to use with the PAGE READ
3. D1h command can be omitted.
4. These commands supported only with ECC disabled.
PLANE or PROGRAM FOR TWO-PLANE INTERNAL DATA MOVE.
TWO-PLANE command.
Number of
Address
Cycles
Valid
5
5
5
3
Cycle #2
D1h-60h
11h-80h
11h-80h
11h-85h
mand
Com-
31
Number of
Address
Cycles
Valid
5
5
5
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
Cycle #3
mand
Com-
D0h
10h
15h
10h
Valid While
LUN is Busy
Selected
Command Definitions
No
No
No
No
© 2009 Micron Technology, Inc. All rights reserved.
Valid While
Other LUNs
are Busy
Yes
Yes
Yes
Yes
Notes
1
3
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