MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 2

• Manufacturer Part Number: MT29F2G16ABBEAH4-IT:E
• Description: 128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
• Manufacturer: Micron Technology Inc

Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Marketing Part Number Chart
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Micron Technology
Product Family
29F = NAND Flash memory
Density
2G = 2Gb
Device Width
08 = 8-bit
16 = 16-bit
Level
A = SLC
Classification
Mark Die
Operating Voltage Range
A = 3.3V (2.7–3.6V)
B = 1.8V (1.7–1.95V)
Feature Set
E = Feature set E
B
1
nCE
1
RnB
1
I/O Channels
MT 29F 2G 08
1
A
B
A
E
A WP xx
2
xx
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x8, x16 NAND Flash Memory
x
ES
:E
Design Revision (shrink)
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
QS = Qualification sample
Reserved for Future Use
Blank
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Speed Grade
Blank
Package Code
WP = 48-pin TSOP 1
HC = 63-ball VFBGA (10.5 x 13 x 1.0mm)
H4 = 63-ball VFBGA (9 x 11 x 1.0mm)
Interface
A = Async only
© 2009 Micron Technology, Inc. All rights reserved.
Features