MT29F2G16ABBEAH4-IT:E Micron Technology Inc, MT29F2G16ABBEAH4-IT:E Datasheet - Page 34

• Manufacturer Part Number: MT29F2G16ABBEAH4-IT:E
• Description: 128MX16 NAND FLASH PLASTIC IND TEMP PBF VFBGA 1.8V ASYNCH/PA
• Manufacturer: Micron Technology Inc

READ ID Parameter Tables
Table 7: READ ID Parameters for Address 00h
PDF: 09005aef83b83f42
m69a_2gb_nand.pdf – Rev. H 09/10 EN
Byte 0 – Manufacturer ID
Manufacturer
Byte 1 – Device ID
MT29F2G08ABBEA
MT29F2G16ABBEA
MT29F2G08ABAEA
MT29F2G16ABAEA
Byte 2
Number of die per CE
Cell type
Number of simultaneously
programmed pages
Interleaved operations
between multiple die
Cache programming
Byte value
Byte 3
Page size
Spare area size (bytes)
Block size (without spare)
Organization
Serial access
(MIN)
Byte value
Byte 4
ECC level
Planes per CE#
Plane size
1.8V
3.3V
Options
Micron
2Gb, x8, 1.8V
2Gb, x16, 1.8V
2Gb, x8, 3.3V
2Gb, x16, 3.3V
1
SLC
2
Not supported
Supported
MT29F2G08ABBEA
MT29F2G16ABBEA
MT29F2G08ABAEA
MT29F2G16ABAEA
2KB
64B
128KB
x8
x16
25ns
20ns
MT29F2G08ABBEA
MT29F2G16ABBEA
MT29F2G08ABAEA
MT29F2G16ABAEA
4-bit ECC/512 (main) +
4 (spare) + 8 (pari-
ty)bytes
2
1Gb
I/07
0
1
1
1
1
1
1
1
1
1
0
1
0
0
1
1
34
I/06
0
0
0
1
1
0
0
0
0
0
0
1
0
1
0
1
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I/05
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
2Gb: x8, x16 NAND Flash Memory
I/04
0
0
1
1
0
1
1
1
1
1
1
1
1
1
1
0
READ ID Parameter Tables
I/03
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
I/02
1
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
© 2009 Micron Technology, Inc. All rights reserved.
I/01
0
1
1
1
1
0
0
0
0
0
0
0
0
0
0
1
I/00
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
0
Value
0xxx0b
1xxx0b
000b
AAh
DAh
BAh
CAh
D5h
2Ch
00b
00b
01b
90h
90h
90h
90h
01b
01b
15h
55h
95h
10b
01b
0b
1b
1b
0b
1b
1