72T1875L5BBI Integrated Device Technology (Idt), 72T1875L5BBI Datasheet - Page 33

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72T1875L5BBI

Manufacturer Part Number
72T1875L5BBI
Description
FIFO Mem Async/Sync Dual Depth/Width Uni-Dir 16K x 18/32K x 9 144-Pin BGA
Manufacturer
Integrated Device Technology (Idt)
Datasheet

Specifications of 72T1875L5BBI

Package
144BGA
Configuration
Dual
Bus Directional
Uni-Directional
Density
288 Kb
Organization
16Kx18|32Kx9
Data Bus Width
9/18 Bit
Timing Type
Asynchronous|Synchronous
Expansion Type
Depth|Width
Typical Operating Supply Voltage
2.5 V
Operating Temperature
-40 to 85 °C
HIGH-IMPEDANCE
as well as three-state types) of an IC to a disabled (high-impedance) state and
selects the one-bit bypass register to be connected between TDI and TDO.
During this instruction, data can be shifted through the bypass register from TDI
to TDO without affecting the condition of the IC outputs.
IDT72T1845/55/65/75/85/95/105/115/125 2.5V TeraSync™ 18-BIT/9-BIT FIFO
8Kx9, 8Kx18/16Kx9, 16Kx18/32Kx9, 32Kx18/64Kx9, 64Kx18/128Kx9, 128Kx18/256Kx9, 256Kx18/512Kx9, 512Kx18/1Mx9
The optional High-Impedance instruction sets all outputs (including two-state
33
BYPASS
functional mode and selects the one-bit bypass register to be connected
between TDI and TDO. The BYPASS instruction allows serial data to be
transferred through the IC from TDI to TDO without affecting the operation of
the IC.
The required BYPASS instruction allows the IC to remain in a normal
2Kx18/4Kx9, 4Kx18/
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
FEBRUARY 10, 2009

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