72T1875L5BBI Integrated Device Technology (Idt), 72T1875L5BBI Datasheet - Page 11

• Manufacturer Part Number: 72T1875L5BBI
• Description: FIFO Mem Async/Sync Dual Depth/Width Uni-Dir 16K x 18/32K x 9 144-Pin BGA
• Manufacturer: Integrated Device Technology (Idt)

Specifications of 72T1875L5BBI

• Package: 144BGA
• Configuration: Dual
• Bus Directional: Uni-Directional
• Density: 288 Kb
• Organization: 16Kx18|32Kx9
• Data Bus Width: 9/18 Bit
• Timing Type: Asynchronous|Synchronous
• Expansion Type: Depth|Width
• Typical Operating Supply Voltage: 2.5 V
• Operating Temperature: -40 to 85 °C

DC ELECTRICAL CHARACTERISTICS
(Commercial: V
NOTES:
1. Both WCLK and RCLK toggling at 20MHz. Data inputs toggling at 10MHz. WCS = HIGH, REN or RCS = HIGH.
2. For the IDT72T18105/72T18115/72T18125, typical I
3. For all devices, typical I
4. Total Power consumed: PT = (V
5. Outputs are not 3.3V tolerant.
IDT72T1845/55/65/75/85/95/105/115/125 2.5V TeraSync™ 18-BIT/9-BIT FIFO
8Kx9, 8Kx18/16Kx9, 16Kx18/32Kx9, 32Kx18/64Kx9, 64Kx18/128Kx9, 128Kx18/256Kx9, 256Kx18/512Kx9, 512Kx18/1Mx9
Symbol
I
I
V
V
I
I
I
I
LI
LO
CC1
CC2
CC1
CC2
For the IDT72T1845/72T1855/72T1865/72T1875/72T1885/72T1895, typical I
OH
OL
(1)
(1)
(5)
(1,2)
(1,2)
CC
Input Leakage Current
Output Leakage Current
Output Logic “1” Voltage,
Output Logic “0” Voltage,
Active V
Standby V
Active V
Standby V
= 2.5V ± 0.125V, T
DDQ
CC
CC
CC
CC
Current (V
Current (V
IDT72T1845/72T1855/72T1865/72T1875/72T1885/72T1895
calculation:
Current (V
Current (V
CC
x I
CC
CC
CC
) + V
CC
CC
A
= 2.5V)
= 2.5V)
= 0°C to +70°C;Industrial: V
IDT72T18105/72T18115/72T18125
for LVTTL I/O I
for HSTL or eHSTL I/O I
for LVTTL I/O I
for HSTL or eHSTL I/O I
with data outputs in High-Impedance: I
with data outputs in Low-Impedance: I
fs = WCLK = RCLK frequency (in MHz), V
N= Number of outputs switching.
= 2.5V)
= 2.5V)
DDQ
Parameter
x I
CC1
DDQ
I
I
I
I
I
I
I/O = LVTTL
I/O = HSTL
I/O = eHSTL
I/O = LVTTL
I/O = HSTL
I/O = eHSTL
I/O = LVTTL
I/O = HSTL
I/O = eHSTL
I/O = LVTTL
I/O = HSTL
I/O = eHSTL
OH
OH
OH
OL
OL
OL
calculation (with data outputs in Low-Impedance)
).
CC1
CC1
= 8 mA
= 8 mA
= 8 mA
= –8 mA @V
= –8 mA @V
= –8 mA @V
(mA) = 1.0 x fs, fs = WCLK = RCLK frequency (in MHz)
(mA) = 0.7mA x fs, fs = WCLK = RCLK frequency (in MHz)
CC1
CC1
@V
@V
@V
(mA) = 30 + (1.0 x fs), fs = WCLK = RCLK frequency (in MHz)
(mA) = 30 + (0.7 x fs), fs = WCLK = RCLK frequency (in MHz).
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
CC1
CC
= 2.5V ± 0.125V, T
= 2.5V ± 0.125V (LVTTL)
= 2.5V ± 0.125V (LVTTL)
= 1.8V ± 0.1V (eHSTL)
= 1.5V ± 0.1V (HSTL)
= 1.8V ± 0.1V (eHSTL)
= 1.5V ± 0.1V (HSTL)
calculation (with data outputs in Low-Impedance)
DDQ
DDQ
11
DDQ
(mA) = (C
(mA) = 0.15 x fs, fs = WCLK = RCLK frequency (in MHz)
= 2.5V for LVTTL; 1.5V for HSTL; 1.8V for eHSTL, C
L
x V
DDQ
2Kx18/4Kx9, 4Kx18/
A
= -40°C to +85°C)
:
x fs x N)/2000
V
V
V
DDQ
DDQ
DDQ
–10
–10
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.4
-0.4
-0.4
COMMERCIAL AND INDUSTRIAL
:
TEMPERATURE RANGES
L
0.4V
0.4V
0.4V
Max.
10
10
—
—
—
40
60
60
10
50
50
50
70
70
20
60
60
= capacitive load (pf), t
FEBRUARY 10, 2009
Unit
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
V
V
V
V
V
V
A
= 25°C,