MT48H8M16LFB4-75 IT:K Micron Technology Inc, MT48H8M16LFB4-75 IT:K Datasheet - Page 80

• Manufacturer Part Number: MT48H8M16LFB4-75 IT:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75 IT:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: -40 to 85 °C
• Organization: 8Mx16
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Power-Down
Figure 49: Power-Down Mode
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Command
BA0, BA1
Address
Precharge all
active banks
DQM
CKE
CLK
A10
DQ
High-Z
t CMS
t CKS
PRECHARGE
t AS
Single bank
All banks
Bank(s)
T0
t CMH
t CKH
t AH
Note:
Two clock cycles
Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND IN-
HIBIT when no accesses are in progress. If power-down occurs when all banks are idle,
this mode is referred to as precharge power-down; if power-down occurs when there is
a row active in any bank, this mode is referred to as active power-down. Entering power-
down deactivates the input and output buffers, excluding CKE, for maximum power
savings while in standby. The device cannot remain in the power-down state longer
than the refresh period (64ms) because no REFRESH operations are performed in this
mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT with CKE
HIGH at the desired clock edge (meeting
All banks idle, enter
power-down mode
t CK
1. Violating refresh requirements during power-down may result in a loss of data.
T1
NOP
t CL
t CKS
T2
NOP
t CH
Input buffers gated off
while in power-down mode
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
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Exit power-down mode
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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t
CKS).
t CKS
Tn + 1
NOP
All banks idle
©2008 Micron Technology, Inc. All rights reserved.
Tn + 2
Power-Down
ACTIVE
Row
Bank
Row
Don’t Care