MT48H8M16LFB4-75 IT:K Micron Technology Inc, MT48H8M16LFB4-75 IT:K Datasheet - Page 78

• Manufacturer Part Number: MT48H8M16LFB4-75 IT:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75 IT:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: -40 to 85 °C
• Organization: 8Mx16
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

SELF REFRESH Operation
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
The self refresh mode can be used to retain data in the device, even when the rest of the
system is powered down. When in self refresh mode, the device retains data without
external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH
command, except CKE is disabled (LOW). After the SELF REFRESH command is regis-
tered, all the inputs to the device become “Don’t Care” with the exception of CKE,
which must remain LOW.
After self refresh mode is engaged, the device provides its own internal clocking, ena-
bling it to perform its own AUTO REFRESH cycles. The device must remain in self
refresh mode for a minimum period equal to
an indefinite period beyond that.
The procedure for exiting self refresh requires a sequence of commands. First, CLK
must be stable prior to CKE going back HIGH. (Stable clock is defined as a signal cycling
within timing constraints specified for the clock ball.) After CKE is HIGH, the device
must have NOP commands issued for a minimum of two clocks for
required for the completion of any internal refresh in progress.
Upon exiting the self refresh mode, AUTO REFRESH commands must be issued accord-
ing to the distributed refresh rate (
AUTO REFRESH utilize the row refresh counter.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
78
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REF/refresh row count) as both SELF REFRESH and
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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RAS and remains in self refresh mode for
SELF REFRESH Operation
©2008 Micron Technology, Inc. All rights reserved.
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XSR because time is