MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 34

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MT47H64M8CF-25E IT:G

Manufacturer Part Number
MT47H64M8CF-25E IT:G
Description
64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
Manufacturer
Micron Technology Inc
Table 12: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
V
DDQ
DQ output access
time from CK/CK#
DQS–DQ skew,
DQS to last DQ
valid, per group,
per access
DQ hold from next
DQS strobe
DQ–DQS hold, DQS
to first DQ not val-
id
CK/CK# to DQ, DQS
High-Z
CK/CK# to DQ
Low-Z
Data valid output
window
DQ and DM input
setup time to DQS
DQ and DM input
hold time to DQS
DQ and DM input
setup time to DQS
DQ and DM input
hold time to DQS
DQ and DM input
pulse width
= 1.8V ±0.1V, V
Parameter
AC Characteristics
DD
= 1.8V ±0.1V
Symbol
t
t
DQSQ
t
DVW
t
t
DIPW
t
t
t
t
DHb
t
QHS
t
DHa
DSb
DSa
QH
LZ
AC
HZ
2
–350
Min
200
200
75
0
-187E
Max
350
175
250
–400
Min
125
250
250
50
-25E
Max
400
200
300
–400
Min
125
250
250
50
-25
Max
400
200
300
MIN = 2 ×
MIN =
MAX =
MAX =
MIN =
MIN = 0.35 ×
MAX = n/a
MAX = n/a
MAX = n/a
–450
MIN = n/a
Min
100
175
300
300
t
QH -
t
t
t
-3E
HP -
AC (MAX)
AC (MAX)
t
AC (MIN)
Max
450
240
340
t
DQSQ
t
QHS
t
CK
–450
Min
100
175
300
300
-3
Max
450
240
340
–500
Min
100
225
350
350
-37E
Max
500
300
400
–600
Min
150
275
400
400
-5E
Max
600
350
450
Units Notes
t
ps
ps
ps
ps
ps
ps
ns
ps
ps
ps
ps
CK
26, 27,
19, 21,
19, 21,
26, 30,
26, 30,
26, 30,
26, 30,
26, 27
26, 27
18, 32
19
28
28
29
22
31
31
31
31

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