MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 118

• Manufacturer Part Number: MT47H64M8CF-25E IT:G
• Description: 64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
• Manufacturer: Micron Technology Inc

Figure 68: Power-Down
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
DQS, DQS#
Command
Address
CK#
CKE
DM
DQ
CK
Valid 1
Valid
T1
Notes:
t CK
power-down
mode 6
Enter
1. If this command is a PRECHARGE (or if the device is already in the idle state), then the
2.
3.
4.
5.
6. No column accesses are allowed to be in progress at the time power-down is entered. If
NOP
T2
power-down mode shown is precharge power-down. If this command is an ACTIVATE
(or if at least one row is already active), then the power-down mode shown is active
power-down.
t
clock edges. CKE must remain at the valid input level the entire time it takes to achieve
the three clocks of registration. Thus, after any CKE transition, CKE may not transition
from its valid level during the time period of
during its
t
READ command.
t
ted via MR (bit 12 = 0).
t
lected via MR (bit 12 = 1).
the DLL was not in a locked state when CKE went LOW, the DLL must be reset after exit-
ing power-down mode for proper READ operation.
t CH
CKE (MIN) of three clocks means CKE must be registered on three consecutive positive
XP timing is used for exit precharge power-down and active power-down to any non-
XARD timing is used for exit active power-down to READ command if fast exit is selec-
XARDS timing is used for exit active power-down to READ command if slow exit is se-
t CL
t
IS and
T3
t CKE (MIN) 2
t
IH window.
T4
118
t IH
power-down
t IS
Micron Technology, Inc. reserves the right to change products or specifications without notice.
mode
NOP
Exit
T5
512Mb: x4, x8, x16 DDR2 SDRAM
t
IS + 2 ×
t XP 3 , t XARD 4
t XARDS 5
NOP
T6
t
t CKE (MIN) 2
CK +
t
IH. CKE must not transition
Power-Down Mode
2004 Micron Technology, Inc. All rights reserved.
Valid
Valid
T7
t IH
Don’t Care
Valid
Valid
T8