MT47H64M8CF-25E IT:G Micron Technology Inc, MT47H64M8CF-25E IT:G Datasheet - Page 21

• Manufacturer Part Number: MT47H64M8CF-25E IT:G
• Description: 64MX8 DDR2 SDRAM PLASTIC IND TEMP FBGA 1.8V
• Manufacturer: Micron Technology Inc

Electrical Specifications – Absolute Ratings
Table 5: Absolute Maximum DC Ratings
Temperature and Thermal Impedance
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. T 2/12 EN
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; any input 0V ≤ V
all other balls not under test = 0V
Output leakage current; 0V ≤ V
and ODT disabled
V
DD
DDQ
DDL
REF
supply voltage relative to V
leakage current; V
supply voltage relative to V
supply voltage relative to V
Notes:
REF
= valid V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions oustide those indicated in the operational sections of this specification is not im-
plied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 22), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in main-
taining the proper junction temperature is using the device’s thermal impedances cor-
rectly. The thermal impedances are listed in Table 7 (page 22) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron
technical note TN-00-08, “Thermal Applications,” prior to using the thermal impedan-
ces listed in Table 7. For designs that are expected to last several years and require the
flexibility to use several DRAM die shrinks, consider using final target theta values (rath-
er than existing values) to account for increased thermal impedances from the die size
reduction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
perature is too high, use of forced air and/or heat sinks may be required in order to sat-
isfy the case temperature specifications.
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
OUT
SS
SS
SSL
SSQ
C
quired when power is ramping down.
REF
≤ V
DD
REF
specification is not exceeded. In applications where the device’s ambient tem-
, V
level
DDQ
≤ 0.6 x V
IN
DDQ
≤ V
; DQ
, and V
DD
DDQ
;
; however, V
DDL
V
Symbol
must be within 300mV of each other at all times; this is not re-
IN
V
V
I
V
VREF
, V
I
DDQ
DDL
OZ
I
DD
I
Electrical Specifications – Absolute Ratings
OUT
21
REF
may be ≥ V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
–1.0
–0.5
–0.5
–0.5
–5
–5
–2
512Mb: x4, x8, x16 DDR2 SDRAM
DDQ
provided that V
DDQ
Max
2.3
2.3
2.3
2.3
.
5
5
2
2004 Micron Technology, Inc. All rights reserved.
REF
Units
μA
μA
μA
V
V
V
V
≤ 300mV.
Notes
1, 2
1
1
3