BC846BPDW1T1G ON Semiconductor, BC846BPDW1T1G Datasheet - Page 8

• Manufacturer Part Number: BC846BPDW1T1G
• Description: TRANS NPN DUAL 65V SOT-363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of BC846BPDW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC846BPDW1T1G; BC846BPDW1T1GOSTR

500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0
0.02
0.001
0.0001
Figure 19. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
Figure 17. DC Current Gain vs. Collector
I
Figure 21. Collector Saturation Region
C
10 mA
/I
I
C
B
=
= 20
I
20 mA
C
I
I
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.1
=
0.01
I
0.001
B
Collector Current
, BASE CURRENT (mA)
I
C
= 50 mA
Current
TYPICAL NPN CHARACTERISTICS − BC847 SERIES
1.0
T
A
I
C
0.1
= 25°C
0.01
= 100 mA
I
C
= 200 mA
V
CE
= 1 V
http://onsemi.com
−55°C
150°C
25°C
10
20
1
0.1
8
0.30
0.25
0.20
0.15
0.10
0.05
2.4
2.8
1.0
1.2
1.6
2.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.2
0
0.0001
0.0001
Figure 18. Collector Emitter Saturation Voltage
Figure 20. Base Emitter Voltage vs. Collector
-55°C to +125°C
I
C
V
Figure 22. Base−Emitter Temperature
/I
CE
B
= 20
= 5 V
I
I
C
C
I
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (mA)
vs. Collector Current
0.001
0.001
1.0
Coefficient
Current
10
0.01
0.01
−55°C
150°C
25°C
25°C
150°C
−55°C
100
0.1
0.1