BC846BPDW1T1G ON Semiconductor, BC846BPDW1T1G Datasheet - Page 7

• Manufacturer Part Number: BC846BPDW1T1G
• Description: TRANS NPN DUAL 65V SOT-363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of BC846BPDW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC846BPDW1T1G; BC846BPDW1T1GOSTR

8.0
6.0
4.0
2.0
20
10
40
-0.1 -0.2
-0.5
V
Figure 15. Capacitance
R
, REVERSE VOLTAGE (VOLTS)
-1.0
-2.0
C
ib
-5.0
TYPICAL PNP CHARACTERISTICS — BC846
C
ob
-10
-20
T
J
= 25°C
-50
http://onsemi.com
-100
7
500
200
100
50
20
Figure 16. Current−Gain − Bandwidth Product
V
CE
= -5.0 V
-1.0
I
C
, COLLECTOR CURRENT (mA)
-10
-100