BC846BPDW1T1G ON Semiconductor, BC846BPDW1T1G Datasheet - Page 5

• Manufacturer Part Number: BC846BPDW1T1G
• Description: TRANS NPN DUAL 65V SOT-363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of BC846BPDW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC846BPDW1T1G; BC846BPDW1T1GOSTR

6.0
4.0
2.0
40
20
10
0.1
0.2
0.5
V
R
Figure 7. Capacitance
, REVERSE VOLTAGE (VOLTS)
1.0
2.0
C
ib
C
5.0
TYPICAL NPN CHARACTERISTICS − BC846
ob
10
20
T
A
= 25°C
50
http://onsemi.com
100
5
500
200
100
50
20
Figure 8. Current−Gain − Bandwidth Product
V
T
A
CE
= 25°C
= 5 V
1.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
50 100