BC846BPDW1T1G ON Semiconductor, BC846BPDW1T1G Datasheet - Page 4

• Manufacturer Part Number: BC846BPDW1T1G
• Description: TRANS NPN DUAL 65V SOT-363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of BC846BPDW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC846BPDW1T1G; BC846BPDW1T1GOSTR

500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0
0.02
0.001
0.0001
Figure 3. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
−55°C
150°C
25°C
I
Figure 1. DC Current Gain vs. Collector
C
0.05
Figure 5. Collector Saturation Region
/I
B
= 20
20 mA
0.1
I
C
I
C
10 mA
, COLLECTOR CURRENT (A)
I
, COLLECTOR CURRENT (A)
C
0.01
0.2
I
=
0.001
B
Collector Current
, BASE CURRENT (mA)
50 mA
Current
0.5
100 mA
1.0
TYPICAL NPN CHARACTERISTICS − BC846
2.0
0.1
0.01
V
CE
5.0
200 mA
T
= 1 V
A
= 25°C
http://onsemi.com
10
20
1
0.1
4
0.30
0.25
0.20
0.15
0.10
0.05
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0.2
0.0001
0.0001
Figure 6. Base−Emitter Temperature Coefficient
Figure 2. Collector Emitter Saturation Voltage
150°C
−55°C
Figure 4. Base Emitter Voltage vs. Collector
25°C
I
C
V
0.5
/I
CE
B
= 20
q
= 5 V
VB
1.0
I
I
C
C
for V
I
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
C
, COLLECTOR CURRENT (mA)
vs. Collector Current
0.001
0.001
BE
2.0
Current
5.0
-55°C to 125°C
10
0.01
0.01
20
−55°C
150°C
25°C
50
100
0.1
200
0.1