BC846BPDW1T1G ON Semiconductor, BC846BPDW1T1G Datasheet - Page 10

• Manufacturer Part Number: BC846BPDW1T1G
• Description: TRANS NPN DUAL 65V SOT-363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of BC846BPDW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC846BPDW1T1G; BC846BPDW1T1GOSTR

500
400
300
200
100
-2.0
-1.6
-1.2
-0.8
-0.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0
0.001
0.0001
Figure 27. Base Emitter Saturation Voltage vs.
−55°C
I
-10 mA
-0.02
25°C
150°C
C
Figure 25. DC Current Gain vs. Collector
I
=
C
Figure 29. Collector Saturation Region
/I
B
= 20
I
C
I
C
, COLLECTOR CURRENT (A)
I
-0.1
, COLLECTOR CURRENT (A)
C
0.01
0.001
= -20 mA
Collector Current
I
B
, BASE CURRENT (mA)
Current
I
C
TYPICAL PNP CHARACTERISTICS − BC847 SERIES
= -50 mA
-1.0
0.1
−55°C
150°C
0.01
T
25°C
A
= 25°C
I
C
I
V
C
CE
= -200 mA
= -100 mA
= 1 V
http://onsemi.com
-10
-20
1
0.1
10
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1.0
1.2
1.6
2.0
2.4
2.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0.0001
0.0001
Figure 26. Collector Emitter Saturation Voltage
Figure 28. Base Emitter Voltage vs. Collector
-0.2
I
-55°C to +125°C
C
V
/I
Figure 30. Base−Emitter Temperature
CE
B
= 20
= 5 V
I
I
C
C
I
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
C
, COLLECTOR CURRENT (mA)
vs. Collector Current
0.001
-1.0
0.001
Coefficient
Current
-10
0.01
0.01
−55°C
150°C
25°C
25°C
−55°C
150°C
-100
0.1
0.1