BC856S,115 NXP Semiconductors, BC856S,115 Datasheet - Page 4

• Manufacturer Part Number: BC856S,115
• Description: TRANSISTOR PNP 65V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BC856S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Transistor Type: 2 PNP (Dual)
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055680115::BC856S T/R::BC856S T/R

NXP Semiconductors
BC856S_2
Product data sheet
Fig 2.
Fig 3.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
FR4 PCB, mounting pad for collector 1 cm
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
5
5
0.50
0.20
0.05
0.01
0.50
0.20
0.05
0.01
= 1
0
= 1
0
0.75
0.33
0.10
0.02
0.75
0.33
0.10
0.02
10
10
4
4
10
10
3
3
10
10
2
Rev. 02 — 19 February 2009
2
2
10
10
1
1
65 V, 100 mA PNP/PNP general-purpose transistor
1
1
10
10
10
10
2
2
© NXP B.V. 2009. All rights reserved.
t
t
BC856S
p
p
006aab420
006aab421
(s)
(s)
10
10
3
3
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