BC856S,115 NXP Semiconductors, BC856S,115 Datasheet - Page 4
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BC856S,115
Manufacturer Part Number
BC856S,115
Description
TRANSISTOR PNP 65V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BC856S115.pdf
(12 pages)
Specifications of BC856S,115
Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Power - Max
300mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Transistor Type
2 PNP (Dual)
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
300 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055680115::BC856S T/R::BC856S T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC856S,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
BC856S_2
Product data sheet
Fig 2.
Fig 3.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
1
1
3
2
10
3
2
10
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
FR4 PCB, mounting pad for collector 1 cm
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
5
5
0.50
0.20
0.05
0.01
0.50
0.20
0.05
0.01
= 1
0
= 1
0
0.75
0.33
0.10
0.02
0.75
0.33
0.10
0.02
10
10
4
4
10
10
3
3
10
10
2
Rev. 02 — 19 February 2009
2
2
10
10
1
1
65 V, 100 mA PNP/PNP general-purpose transistor
1
1
10
10
10
10
2
2
© NXP B.V. 2009. All rights reserved.
t
t
BC856S
p
p
006aab420
006aab421
(s)
(s)
10
10
3
3
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