BC856S,115 NXP Semiconductors, BC856S,115 Datasheet - Page 3
![TRANSISTOR PNP 65V 100MA SOT363](/photos/5/31/53138/568-umt6_sot-363_sc-88__sot363_sml.jpg)
BC856S,115
Manufacturer Part Number
BC856S,115
Description
TRANSISTOR PNP 65V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.BC856S115.pdf
(12 pages)
Specifications of BC856S,115
Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Power - Max
300mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Transistor Type
2 PNP (Dual)
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
300 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055680115::BC856S T/R::BC856S T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC856S,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
6. Thermal characteristics
BC856S_2
Product data sheet
Table 6.
[1]
[2]
Symbol
Per transistor
R
R
Per device
R
Fig 1.
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Per device: Power derating curves SOT363 (SC-88)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
(mW)
Rev. 02 — 19 February 2009
P
tot
500
400
300
200
100
0
75
25
(1)
(2)
65 V, 100 mA PNP/PNP general-purpose transistor
Conditions
in free air
in free air
25
2
75
125
[1]
[2]
[1]
[2]
T
006aab419
amb
Min
-
-
-
-
-
( C)
175
Typ
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
BC856S
Max
568
500
230
416
313
2
Unit
K/W
K/W
K/W
K/W
K/W
.
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