BC856S,115 NXP Semiconductors, BC856S,115 Datasheet - Page 10

• Manufacturer Part Number: BC856S,115
• Description: TRANSISTOR PNP 65V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of BC856S,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Transistor Type: 2 PNP (Dual)
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055680115::BC856S T/R::BC856S T/R

NXP Semiconductors
11. Revision history
Table 9.
BC856S_2
Product data sheet
Document ID
BC856S_2
Modifications:
BC856S_1
Revision history
Release date
20090219
19990824
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The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Section 1.2
Section 4
Section 7
Section 9 “Packing
Section 10
Section 12 “Legal
“Marking”: updated
“Characteristics”: enhanced
“Soldering”: added
“Features”: adapted
Data sheet status
Product data sheet
Product specification
Rev. 02 — 19 February 2009
information”: updated
information”: added
65 V, 100 mA PNP/PNP general-purpose transistor
Change notice
-
-
Supersedes
BC856S_1
-
© NXP B.V. 2009. All rights reserved.
BC856S
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