BC856S,115 NXP Semiconductors, BC856S,115 Datasheet

TRANSISTOR PNP 65V 100MA SOT363

BC856S,115

Manufacturer Part Number
BC856S,115
Description
TRANSISTOR PNP 65V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC856S,115

Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Power - Max
300mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
65V
Transistor Type
2 PNP (Dual)
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 100mA
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
300 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055680115::BC856S T/R::BC856S T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC856S,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
1. Product profile
2. Pinning information
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
I
I
I
I
I
I
Table 1.
Table 2.
Symbol
Per transistor
V
I
h
Pin
1
2
3
4
5
6
C
FE
CEO
BC856S
65 V, 100 mA PNP/PNP general-purpose transistor
Rev. 02 — 19 February 2009
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
General-purpose switching and amplification
Parameter
collector-emitter voltage
collector current
DC current gain
Quick reference data
Pinning
Description
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
Conditions
open base
V
I
C
CE
= 2 mA
= 5 V;
Simplified outline
1
6
Min
-
-
110
5
2
3
4
Typ
-
-
-
Product data sheet
Graphic symbol
TR1
Max
-
6
1
65
100
sym018
5
2
Unit
V
mA
4
3
TR2

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BC856S,115 Summary of contents

Page 1

BC856S 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 02 — 19 February 2009 1. Product profile 1.1 General description PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low collector ...

Page 2

... NXP Semiconductors 3. Ordering information Table 3. Type number BC856S 4. Marking Table 4. Type number BC856S [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor V CBO V CEO ...

Page 3

... NXP Semiconductors (1) FR4 PCB, mounting pad for collector 1 cm (2) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 6. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 0.75 th(j-a) (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) 0.75 (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration ...

Page 5

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter Per transistor I CBO I EBO CEsat V BEsat [1] Pulse test: t BC856S_2 Product data sheet 65 V, 100 mA PNP/PNP general-purpose transistor Characteristics Conditions collector-base cut-off current 150 C j emitter-base cut-off current DC current gain collector-emitter ...

Page 6

... NXP Semiconductors 500 h FE 400 (1) 300 (2) 200 (3) 100 ( 150 C amb ( amb ( amb Fig 4. Per transistor: DC current gain as a function of collector current; typical values 1 (V) 1.0 (1) 0.8 (2) 0.6 (3) 0 amb ( amb ( 150 C amb Fig 6. Per transistor: Base-emitter voltage as a function of collector current; typical values ...

Page 7

... NXP Semiconductors 1 V CEsat ( (1) ( 150 C amb ( amb ( amb Fig 8. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values BC856S_2 Product data sheet 65 V, 100 mA PNP/PNP general-purpose transistor 006aab433 (Hz (mA Fig 9. Per transistor: Transition frequency as a function of collector current; typical values Rev. 02 — ...

Page 8

... NXP Semiconductors 8. Package outline Fig 10. Package outline SOT363 (SC-88) 9. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description BC856S [1] For further information and the availability of packing methods, see [2] T1: normal taping ...

Page 9

... NXP Semiconductors 10. Soldering Fig 11. Reflow soldering footprint SOT363 (SC-88) 4.5 Fig 12. Wave soldering footprint SOT363 (SC-88) BC856S_2 Product data sheet 65 V, 100 mA PNP/PNP general-purpose transistor 2.65 1.5 2.35 0 1.8 1.3 1.3 2.45 5.3 Rev. 02 — 19 February 2009 0 0.6 ...

Page 10

... Document ID Release date BC856S_2 20090219 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1.2 • Section 4 • ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 Legal information ...

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