BT150S-600R,118 NXP Semiconductors, BT150S-600R,118 Datasheet - Page 2

• Manufacturer Part Number: BT150S-600R,118
• Description: THYRISTOR 600V 4A SOT428
• Manufacturer: NXP Semiconductors

Specifications of BT150S-600R,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Scr Type: Sensitive Gate
• Voltage - Off State: 600V
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Voltage - On State (vtm) (max): 1.8V
• Current - On State (it (av)) (max): 2.5A
• Current - On State (it (rms)) (max): 4A
• Current - Gate Trigger (igt) (max): 200µA
• Current - Hold (ih) (max): 6mA
• Current - Off State (max): 500µA
• Current - Non Rep. Surge 50, 60hz (itsm): 35A, 38A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Current - On State (it (rms) (max): 4A
• Breakover Current Ibo Max: 38 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934048900118; BT150S-600R /T3; BT150S-600R /T3

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
October 1997
Thyristors
logic level
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
t
t
GT
L
H
D
gt
q
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
, I
D
R
/dt
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
CONDITIONS
pcb (FR4) mounted; footprint as in Fig.14
CONDITIONS
V
V
V
I
V
V
V
CONDITIONS
V
exponential waveform; R
I
dI
V
V
dV
T
TM
D
D
D
D
D
D
DM
D
R
G
= 5 A
D
/dt = 0.2 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 10 A; V
= 67% V
= 10 V; dI
/dt = 2 V/ s; R
= 67% V
DRM(max)
DRM(max)
T
GT
GT
T
DRM(max)
D
DRM(max)
TM
= 0.1 A
= 0.1 A
; I
; V
= 0.1 A
= 0.1 A
= V
/dt = 10 A/ s;
T
R
2
= 0.1 A; T
= V
DRM(max)
; T
GK
; T
= 1 k
RRM(max)
j
= 125 ˚C; I
j
= 125 ˚C;
; I
GK
G
j
= 110 ˚C
; T
= 100
= 5 mA;
j
= 125 ˚C
TM
= 8 A;
MIN.
MIN.
MIN.
0.1
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
0.17
0.10
1.23
100
0.4
0.2
0.1
75
15
50
BT150S series
2
-
Product specification
BT150M series
MAX.
MAX.
MAX.
200
3.0
1.8
1.5
0.5
10
6
-
-
-
-
-
Rev 1.100
UNIT
UNIT
UNIT
V/ s
K/W
K/W
mA
mA
mA
V
V
V
A
s
s