BT150S NXP Semiconductors, BT150S Datasheet
BT150S
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BT150S Summary of contents
Page 1
... The rate of rise of current should not exceed Note: Operation above 110˚C may require the use of a gate to cathode resistor less. October 1997 QUICK REFERENCE DATA SYMBOL PARAMETER BT150S (or BT150M Repetitive peak off-state DRM V voltages ...
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... mA DRM(max / 125 ˚ DRM(max / / Product specification BT150S series BT150M series MIN. TYP. MAX. UNIT - - 3.0 K K/W MIN. TYP. MAX. UNIT - 15 200 - 0. 0. ...
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... VGT(25 C) 1.6 111 C 1.4 1.2 1 0.8 0.6 0.4 100 -50 , T(RMS Product specification BT150S series BT150M series I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT150 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
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... dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT150S series BT150M series BT148 typ max 0.5 1 1 BT148 0.1ms 1ms 10ms 0. versus th j-mb pulse width t ...
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... Plastic meets UL94 V0 at 1/8". October 1997 1.1 2.38 max 6.73 max 0.93 max tab 6.22 max 10.4 max 2 0.5 min 3 1 0.8 max (x2) Fig.13. SOT428 : centre pin connected to tab. 7.0 2.15 2.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting . 5 Product specification BT150S series BT150M series seating plane 5.4 4 min 4.6 0.5 0.3 0.5 7.0 1.5 Rev 1.100 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Product specification BT150S series BT150M series Rev 1.100 ...