BT150S-600R,118 NXP Semiconductors, BT150S-600R,118 Datasheet

BT150S-600R,118

Manufacturer Part Number

BT150S-600R,118

Description

THYRISTOR 600V 4A SOT428

Manufacturer

NXP Semiconductors

Datasheet

1.BT150S-600R118.pdf (6 pages)

Specifications of BT150S-600R,118

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Scr Type

Sensitive Gate

Voltage - Off State

600V

Voltage - Gate Trigger (vgt) (max)

1.5V

Voltage - On State (vtm) (max)

1.8V

Current - On State (it (av)) (max)

2.5A

Current - On State (it (rms)) (max)

Current - Gate Trigger (igt) (max)

200µA

Current - Hold (ih) (max)

6mA

Current - Off State (max)

500µA

Current - Non Rep. Surge 50, 60hz (itsm)

35A, 38A

Operating Temperature

-40°C ~ 125°C

Mounting Type

Surface Mount

Current - On State (it (rms) (max)

Breakover Current Ibo Max

38 A

Rated Repetitive Off-state Voltage Vdrm

600 V

Off-state Leakage Current @ Vdrm Idrm

0.5 mA

Forward Voltage Drop

1.8 V

Gate Trigger Voltage (vgt)

1.5 V

Maximum Gate Peak Inverse Voltage

5 V

Gate Trigger Current (igt)

0.2 mA

Holding Current (ih Max)

6 mA

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

934048900118
BT150S-600R /T3
BT150S-600R /T3

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BT150S-600R,118

Manufacturer:

NXP Semiconductors

Quantity:

7 200

Current page: 1 of 6
Download datasheet (43Kb)

Philips Semiconductors

GENERAL DESCRIPTION

Glass passivated, sensitive gate

thyristors in a plastic envelope,

suitable

intended for use in general purpose

switching

applications. These devices are

intended to be interfaced directly to

microcontrollers,

circuits and other low power gate

trigger circuits.

PINNING - SOT428

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/ s.

2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.

October 1997

Thyristors

logic level

SYMBOL PARAMETER

NUMBER

T(AV)

T(RMS)

TSM

stg

DRM

RGM

G(AV)

/dt

tab

, V

RRM

for

and

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak

on-state current

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

Standard Alternative

cathode

t for fusing

anode

gate

surface

logic

phase

integrated

cathode

mounting,

anode

gate

control

QUICK REFERENCE DATA

PIN CONFIGURATION

CONDITIONS

half sine wave; T

all conduction angles

half sine wave; T

surge

t = 10 ms

t = 8.3 ms

t = 10 ms

over any 20 ms period

SYMBOL

RRM

T(AV)

T(RMS)

TSM

DRM

/dt = 50 mA/ s

= 10 A; I

PARAMETER

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

= 50 mA;

tab

= 25 ˚C prior to

BT150S (or BT150M)-

111 ˚C

MIN.

-40

SYMBOL

-500R -600R -800R

500

MAX. MAX. MAX. UNIT

500R

500

2.5

Product specification

MAX.

600

125

BT150S series

150

2.5

6.1

0.5

600R

600

2.5

BT150M series

800

800R

800

2.5

Rev 1.100

UNIT

A/ s

˚C

Related parts for BT150S-600R,118

BT150S-600R,118 Summary of contents

Page 1

... Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed Note: Operation above 110˚C may require the use of a gate to cathode resistor less. October 1997 QUICK REFERENCE DATA SYMBOL PARAMETER BT150S (or BT150M Repetitive peak off-state DRM V voltages ...

Page 2

... DRM(max) R RRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform 100 mA DRM(max / 125 ˚ DRM(max / / Product specification BT150S series BT150M series MIN. TYP. MAX. UNIT - - 3.0 K K/W MIN. TYP. MAX. UNIT - 15 200 - 0. 0. 1.23 1 0.4 1.5 V 0.1 0 0.1 0.5 mA MIN. TYP. ...

Page 3

... C 1.4 1.2 1 0.8 0.6 0.4 100 -50 , T(RMS Product specification BT150S series BT150M series I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT150 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT150S series BT150M series BT148 typ max 0.5 1 1 BT148 0.1ms 1ms 10ms 0. versus th j-mb pulse width ...

Page 5

... Fig.13. SOT428 : centre pin connected to tab. 7.0 2.15 2.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting . 5 Product specification BT150S series BT150M series seating plane 5.4 4 min 4.6 0.5 0.3 0.5 7.0 1.5 Rev 1.100 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Product specification BT150S series BT150M series Rev 1.100 ...

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