EC103D1,116 NXP Semiconductors, EC103D1,116 Datasheet - Page 8

• Manufacturer Part Number: EC103D1,116
• Description: THYRISTOR GATE 600V 0.8A SOT54
• Manufacturer: NXP Semiconductors

Specifications of EC103D1,116

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.35V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 12µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.012 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056686116; EC103D1 T/R; EC103D1 T/R

NXP Semiconductors
7. Package information
Epoxy meets requirements of UL 94 V-0 at 3.175 mm
EC103D1_2
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H
2.0
1.6
1.2
0.4
0.8
0
junction temperature
50
R
GK
= 1 k
0
50
100
003aaa115
T
j
( C)
150
Rev. 02 — 31 July 2008
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
(1) R
D
10
10
10
/dt
10
4
3
2
function of junction temperature; typical values
0
GK
= 1 k
50
(1)
Thyristor, sensitive gate
100
EC103D1
© NXP B.V. 2008. All rights reserved.
T
j
003aac341
( C)
150
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