EC103D1,116 NXP Semiconductors, EC103D1,116 Datasheet - Page 7

• Manufacturer Part Number: EC103D1,116
• Description: THYRISTOR GATE 600V 0.8A SOT54
• Manufacturer: NXP Semiconductors

Specifications of EC103D1,116

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.35V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 12µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.012 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056686116; EC103D1 T/R; EC103D1 T/R

NXP Semiconductors
EC103D1_2
Product data sheet
Fig 7. Normalized gate trigger voltage as a function of
Fig 9. On-state current as a function of on-state
V
GT(25 C)
V
(A)
I
GT
T
(1) T
(2) T
(3) T
1.6
1.2
0.8
0.4
2.5
2.0
1.5
1.0
0.5
0
junction temperature
voltage
0.4
50
V
R
o
j
j
j
s
= 125 C; typical values
= 125 C; maximum values
= 25 C; typical values
= 0.895 V
= 0.195
0
0.8
(1)
50
(2)
1.2
(3)
100
V
003aaa112
T
003aaa109
T
j
( C)
(V)
150
1.6
Rev. 02 — 31 July 2008
Fig 8. Normalized gate trigger current as a function of
Fig 10. Normalized latching current as a function of
I
GT(25 C)
I
L(25 C)
I
GT
I
L
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
0
0
junction temperature
junction temperature
50
50
R
GK
= 1 k
0
0
50
50
Thyristor, sensitive gate
100
100
EC103D1
© NXP B.V. 2008. All rights reserved.
003aaa113
T
003aaa114
T
j
j
( C)
( C)
150
150
7 of 12