EC103D1,116 NXP Semiconductors, EC103D1,116 Datasheet - Page 6

• Manufacturer Part Number: EC103D1,116
• Description: THYRISTOR GATE 600V 0.8A SOT54
• Manufacturer: NXP Semiconductors

Specifications of EC103D1,116

• Package / Case: TO-92-3 (Standard Body), TO-226
• Scr Type: Sensitive Gate
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 800mV
• Voltage - On State (vtm) (max): 1.35V
• Current - On State (it (av)) (max): 500mA
• Current - On State (it (rms)) (max): 800mA
• Current - Gate Trigger (igt) (max): 12µA
• Current - Hold (ih) (max): 5mA
• Current - Off State (max): 100µA
• Current - Non Rep. Surge 50, 60hz (itsm): 8A, 9A
• Mounting Type: Through Hole
• Current - On State (it (rms) (max): 800mA
• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.012 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056686116; EC103D1 T/R; EC103D1 T/R

NXP Semiconductors
6. Characteristics
Table 5.
T
EC103D1_2
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
j
T
GT
= 25 C unless otherwise stated.
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
Conditions
V
V
see
V
see
I
I
V
R
V
R
V
exponential waveform; R
see
I
dI
V
I
(dI
R
T
T
TM
TM
D
D
D
D
R
DM
DM
GK
GK
GK
G
V
V
= 1 A
= 10 mA; see
T
/dt = 0.1 A/ s
= 12 V; I
= 12 V; I
= 12 V; I
= V
= V
= 2 A; V
= 1.6 A; V
/dt)
D
D
Figure 10
Figure 11
Figure 12
= 1 k
= 1 k
= 0.67
= 0.67
= 1 k
= 12 V
= V
DRM(max)
RRM(max)
M
= 30 A/ s; dV
DRM(max)
T
GT
GT
D
Rev. 02 — 31 July 2008
= 0.1 A; see
V
= V
V
R
= 0.5 mA; R
= 0.5 mA; R
; T
; T
DRM(max)
DRM(max)
= 35 V;
Figure 7
DRM(max)
; T
j
j
= 125 C;
= 125 C;
j
= 125 C
D
; T
; T
/dt = 2 V/ s;
GK
; I
j
j
Figure 8
GK
GK
= 125 C;
= 125 C;
G
= 1 k ;
= 10 mA;
= 1 k ;
= 1 k ;
Min
-
-
-
-
-
0.2
-
-
-
-
-
Thyristor, sensitive gate
Typ
3
2
2
1.2
0.5
0.3
0.05
0.05
150
2
100
EC103D1
© NXP B.V. 2008. All rights reserved.
Max
12
6
5
1.35
0.8
-
0.1
0.1
-
-
-
Unit
mA
mA
V
V
V
mA
mA
V/ s
A
s
s
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