BLS3135-20,114 NXP Semiconductors, BLS3135-20,114 Datasheet - Page 6
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BLS3135-20,114
Manufacturer Part Number
BLS3135-20,114
Description
TRANSISTOR RF POWER SOT422A
Manufacturer
NXP Semiconductors
Datasheet
1.BLS3135-20114.pdf
(12 pages)
Specifications of BLS3135-20,114
Package / Case
SOT-422A
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
75V
Frequency - Transition
3.5GHz
Gain
8dB
Power - Max
80W
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 1.5A, 5V
Current - Collector (ic) (max)
2A
Mounting Type
Surface Mount
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure (db Typ @ F)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055937114
BLS3135-20 TRAY
BLS3135-20 TRAY
BLS3135-20 TRAY
BLS3135-20 TRAY
Philips Semiconductors
2000 Feb 01
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
The other side is unetched and serves as a ground plane.
C1 = C2 = 4.7 pF (ATC 100A).
Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit.
30
6
30
C2
r
= 2.2), thickness 0.38 mm.
C1
MCD869
40
BLS3135-20
Product specification