BLS3135-20,114 NXP Semiconductors, BLS3135-20,114 Datasheet - Page 5

• Manufacturer Part Number: BLS3135-20,114
• Description: TRANSISTOR RF POWER SOT422A
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-20,114

• Package / Case: SOT-422A
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.5GHz
• Gain: 8dB
• Power - Max: 80W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1.5A, 5V
• Current - Collector (ic) (max): 2A
• Mounting Type: Surface Mount
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055937114; BLS3135-20 TRAY; BLS3135-20 TRAY

Philips Semiconductors
2000 Feb 01
handbook, halfpage
Microwave power transistor
V
Fig.6
CB
( )
z i
10
= 40 V; class-C; P
15
10
5
0
5
3
Input impedance as a function of frequency
(series components); typical values.
L
3.2
= 20 W.
3.4
f (GHz)
x i
r i
MCD867
3.6
5
handbook, halfpage
V
Fig.7
CB
( )
Z L
10
= 40 V; class-C; P
15
10
5
0
5
3
Load impedance as a function of frequency
(series components); typical values.
L
3.2
= 20 W.
3.4
BLS3135-20
Product specification
f (GHz)
X L
R L
MCD868
3.6