BLS3135-20 TRAY NXP Semiconductors, BLS3135-20 TRAY Datasheet

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BLS3135-20 TRAY

Manufacturer Part Number
BLS3135-20 TRAY
Description
RF Bipolar Power BULKTR TNS-MICL
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS3135-20 TRAY

Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
80000 mW
Package / Case
SOT-422
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS3135-20,114
Product specification
DATA SHEET
BLS3135-20
Microwave power transistor
halfpage
DISCRETE SEMICONDUCTORS
M3D259
2000 Feb 01

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BLS3135-20 TRAY Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2000 Feb 01 PINNING - SOT422A handbook, halfpage (GHz) (V) 3.1 to 3.5 40 WARNING 2 Product specification BLS3135-20 PIN DESCRIPTION 1 collector 2 emitter 3 base; connected to flange MBK051 Fig.1 Simplified outline. ...

Page 3

... BE open collector t 100 100 0.2 mm from ceramic cap PARAMETER CONDITIONS mA; open emitter (GHz) (V) 3 Product specification BLS3135-20 MIN. 10 CONDITIONS t = 100 s; = 10%; note 200 s; = 10%; note 300 s; = 10%; note 1 p MIN (W) (dB typ. 22 typ. 8 MAX. UNIT +200 C 200 ...

Page 4

... Collector efficiency as a function of load power; typical values. 2000 Feb 01 MCD863 handbook, halfpage (1) ( 3.1 GHz. ( 3.3 GHz. ( 3.5 GHz. Fig.3 MCD865 handbook, halfpage (1) ( Fig.5 4 Product specification BLS3135- (dB class- 100 s; = 10%. p Power gain as a function of load power; typical values (dB ...

Page 5

... Microwave power transistor 15 handbook, halfpage 3 class- Fig.6 Input impedance as a function of frequency (series components); typical values. 2000 Feb 01 MCD867 handbook, halfpage 3.4 3.6 f (GHz Fig.7 5 Product specification BLS3135- 3.2 3 class- Load impedance as a function of frequency (series components); typical values. MCD868 3.6 f (GHz) ...

Page 6

... The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric ( The other side is unetched and serves as a ground plane 4.7 pF (ATC 100A). Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit. 2000 Feb Product specification BLS3135- MCD869 = 2.2), thickness 0.38 mm. r ...

Page 7

... REFERENCES JEDEC EIAJ 7 Product specification BLS3135- 4.52 3.43 22.99 9.91 3.35 16.51 3.74 3.18 2.92 22.73 9.65 0.135 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Feb 01 8 Product specification BLS3135-20 ...

Page 9

... Philips Semiconductors Microwave power transistor 2000 Feb 01 NOTES 9 Product specification BLS3135-20 ...

Page 10

... Philips Semiconductors Microwave power transistor 2000 Feb 01 NOTES 10 Product specification BLS3135-20 ...

Page 11

... Philips Semiconductors Microwave power transistor 2000 Feb 01 NOTES 11 Product specification BLS3135-20 ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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