BLS3135-65 TRAY NXP Semiconductors, BLS3135-65 TRAY Datasheet

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BLS3135-65 TRAY

Manufacturer Part Number
BLS3135-65 TRAY
Description
RF Bipolar Power BULKTR TNS-MICL
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS3135-65 TRAY

Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage Vceo Max
75 V
Emitter- Base Voltage Vebo
2 V
Power Dissipation
200000 mW
Package / Case
SOT-422
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLS3135-65,114
Product specification
Supersedes data of 1999 May 01
book, halfpage
DATA SHEET
BLS3135-65
Microwave power transistor
M3D259
DISCRETE SEMICONDUCTORS
1999 Aug 16

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BLS3135-65 TRAY Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-65 Microwave power transistor Product specification Supersedes data of 1999 May 01 1999 Aug 16 ...

Page 2

... After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1999 Aug 16 PINNING - SOT422A handbook, halfpage (GHz) (V) 3.1 to 3.5 40 WARNING 2 Product specification BLS3135-65 PIN DESCRIPTION 1 collector 2 emitter 3 base; connected to flange MBK051 Fig.1 Simplified outline. ...

Page 3

... open collector t 100 100 0.2 mm from ceramic cap PARAMETER CONDITIONS mA; open emitter mA 1 (GHz) (V) 3 Product specification BLS3135-65 MIN. 10 CONDITIONS t = 100 s; = 10%; note 300 s; = 10%; note 1 p MIN (W) (dB MAX. UNIT 200 W +200 C 200 C 235 C VALUE UNIT ...

Page 4

... Aug 16 MCD750 10 handbook, halfpage G p (1) (dB) ( class- ( 3.1 GHz. ( 3.3 GHz. ( 3.5 GHz. Fig.3 MCD752 (1) (3) (2) 80 100 P L (W) 4 Product specification BLS3135-65 (2) ( 100 s; = 10%. p Power gain as a function of load power; typical values. MCD751 (1) 100 P L (W) ...

Page 5

... V; class- Fig.6 MCD755 8 handbook, halfpage 3.4 3.5 f (GHz class- Fig.8 5 Product specification BLS3135-65 3.1 3.2 3.3 3.4 = 100 s; = 10%. p Return losses input as a function of frequency; typical values 3.1 3.2 3.3 3 Load impedance as a function of frequency (series components); typical values. MCD754 3 ...

Page 6

... Earth connections from the component side to the ground plane are made by through metallization. The striplines are on double-clad printed-circuit board with Duroid dielectric ( Fig.9 1999 Aug 2.2); thickness = 0.38 mm. r Component layout for 3.1 to 3.5 GHz class-C test circuit. 6 Product specification BLS3135- output MCD757 ...

Page 7

... REFERENCES JEDEC EIAJ 7 Product specification BLS3135- 4.52 3.43 22.99 9.91 3.35 16.51 3.74 3.18 2.92 22.73 9.65 0.135 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 16 8 Product specification BLS3135-65 ...

Page 9

... Philips Semiconductors Microwave power transistor 1999 Aug 16 NOTES 9 Product specification BLS3135-65 ...

Page 10

... Philips Semiconductors Microwave power transistor 1999 Aug 16 NOTES 10 Product specification BLS3135-65 ...

Page 11

... Philips Semiconductors Microwave power transistor 1999 Aug 16 NOTES 11 Product specification BLS3135-65 ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...

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