MMBTH81_D87Z Fairchild Semiconductor, MMBTH81_D87Z Datasheet - Page 3

• Manufacturer Part Number: MMBTH81_D87Z
• Description: TRANS RF PNP 20V 50MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBTH81_D87Z

• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 600MHz
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -

Typical Characteristics
0.01
-14
-12
-10
-1.6
-1.4
-1.2
-0.8
-0.6
-0.4
100
0.1
-8
-6
-4
-2
-
- 1
10
0
-
0.1
1
0.1
25
200 MHz
I
Contours of Constant Gain
Voltage vs Collector Current
C
Collector Reverse Current
= 10 I
Bandwidth Product (f )
vs Ambient Temperature
Base-Emitter Saturation
I - COLLECTOR CURRENT (mA)
T - AMBIENT TEMPE RATURE ( C)
C
I - COLLECTOR CURRENT (mA)
50
A
C
V
B
CE
500 MHz
= -6.0V
-
-
1
1
T = 55 ° C
T = 125 ° C
75
A
A
V
-
CE
900 MHz
= -3.0V
100
-
-
10
10
500 MHz
200 MHz
T = 25 ° C
1200 MHz
(continued)
1500 MHz
A
T
125
°
-
-
100
100
150
0.8
0.6
0.4
0.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
350
300
250
200
150
100
-
1
0
50
3
2
1
0.1
0
0
0
V
CE
Input / Output Capacitance
= 10V
SOT-23
Base-Emitter ON Voltage
vs Reverse Bias Voltage
Ambient Temperature
Power Dissipation vs
25
vs Collector Current
I - COLLECTOR CURRENT (mA)
-2
C
REVERSE BIAS VOLTAGE (V)
T = 25°C
A
-
TEMPERATURE ( C)
1
50
T = 100°C
A
A
C
-4
ibo
PNP RF Transistor
TO-92
75
-6
-
10
100
°
f = 1.0 MHz
C
-8
obo
125
(continued)
-
100
-10
150