KSC2757RMTF Fairchild Semiconductor, KSC2757RMTF Datasheet - Page 3
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KSC2757RMTF
Manufacturer Part Number
KSC2757RMTF
Description
TRANSISTOR NPN 15V 50MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSC2757YMTF.pdf
(5 pages)
Specifications of KSC2757RMTF
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.1GHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
©2002 Fairchild Semiconductor Corporation
Typical Characteristics
150
125
100
200
150
100
10
75
50
25
50
8
6
4
2
0
0
0
-125
0.0
0
I
C
= 10 mA
Figure 7. Power Derating
25
-100
100 MHz
0.4
Ta[
5 mA
Figure 11. yob - f
3 mA
Figure 9. yfb - f
50
o
200 MHz
f = 100 MHz
g
C], AMBIENT TEMPERATURE
g
ob
fb
-75
[ms], CONDUCTANCE
[ms], CONDUCTANCE
400 MHz
3 mA
75
0.8
200 MHz
600 MHz
5 mA
100
-50
800 MHz
400 MHz
1.2
125
f = 1000 MHz
I
-25
C
yob = g
V
= 10 mA
CB
yfb = g
V
= 10 V
150
CB
(Continued)
= 10 V
1.6
ob
fb
+ j b
0
+ j b
1000 MHz
175
ob
fb
2.0
200
25
-100
-20
-40
-60
-80
-1.5
-3.0
-4.5
-6.0
-7.5
20
0.0
0
-0.4
0
f = 1000 MHz
yrb = g
V
400 MHz
CB
= 10 V
40
800 MHz
600 MHz
re
-0.2
200 MHz
+ j b
Figure 10. yrb - f
Figure 8. yib - f
g
rb
g
ib
200 MHz
f = 100 MHz
rb
400 MHz
80
[ms], CONDUCTANCE
[ms], CONDUCTANCE
100 MHz
I
C
0.0
= 3 mA
600 MHz
5 mA
120
10 mA
10 mA
0.2
160
800 MHz
yib = g
V
CB
= 10 V
5 mA
ib
0.4
200
+ j b
Rev. A2, September 2002
I
1000 MHz
C
ib
= 3 mA
240
0.6