2N5770_D27Z Fairchild Semiconductor, 2N5770_D27Z Datasheet

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2N5770_D27Z

Manufacturer Part Number
2N5770_D27Z
Description
TRANSISTOR RF NPN 15V 50MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 2N5770_D27Z

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Noise Figure (db Typ @ F)
6dB @ 60MHz
Gain
15dB
Power - Max
350mW
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 8mA, 10V
Current - Collector (ic) (max)
50mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
JC
JA
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
Absolute Maximum Ratings*
, T
*
NPN RF Transistor
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
Derate above 25 C
B E
2N5770
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
Discrete POWER & Signal
2N5770
Max
350
125
357
2.8
-55 to +150
Value
4.5
15
30
50
Technologies
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C

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2N5770_D27Z Summary of contents

Page 1

... Thermal Characteristics Symbol Characteristic P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA 1997 Fairchild Semiconductor Corporation TO- 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Discrete POWER & Signal Technologies Value Units 4.5 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...

Page 3

... PROELECTRON SERIES), 96 L34Z TO-92 STANDARD NO LEADCLIP STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 FSCINT Label ©2001 Fairchild Semiconductor Corporation TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles 5 Reels per Intermediate Box F63TNR Label Customized Label AMMO PACK OPTION See Fig 3 ...

Page 4

TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Style “A”, D26Z, D70Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE ...

Page 5

TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4 User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ELECT ROSTATIC SEN SITIVE D EVICES F63TNR Label ...

Page 6

... TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 January 2000, Rev. B ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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