BFR 360F H6327 Infineon Technologies, BFR 360F H6327 Datasheet - Page 3

• Manufacturer Part Number: BFR 360F H6327
• Description: TRANS RF NPN 6V 35MA TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 360F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1dB @ 1.8GHz
• Gain: 15.5dB
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 15mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR360FH6327XT

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Minimum noise figure
I
f = 1.8 GHz
Power gain, maximum available
I
f = 1.8 GHz
f = 3 GHz
Transducer gain
I
f = 1.8 GHz
f = 3 GHz
Third order intercept point at output
V
Z
1dB compression point at output
I
f = 1.8 GHz
1
2
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 )
IP3 value depends on termination of all intermodulation frequency components.
S
CB
CE
EB
CE
= 15 mA, V
= 3 mA, V
= 15 mA, V
= 15 mA, V
= 15 mA, V
= Z
= 0.5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 5 V, f = 1 MHz, V
= 3 V, I
L
= 50 Ω
C
CE
CE
CE
CE
CE
= 15 mA, f = 1.8 GHz,
= 3 V, Z
= 3 V, f = 1 GHz
= 3 V, Z
= 3 V, Z
= 3 V, Z
BE
BE
S
S
S
S
CB
= Z
= 0 ,
= 0 ,
= Z
= Z
= Z
= 0 ,
Sopt
Sopt,
L
L
A
= 50 Ω ,
1)
= 50 Ω ,
,
= 25°C, unless otherwise specified
Z
2)
L
= Z
Lopt
,
3
Symbol
f
C
C
C
NF
G
|S
IP
P
T
-1dB
cb
ce
eb
ma
21e
3
min
|
2
min.
11
-
-
-
-
-
-
-
-
-
-
Values
15.5
0.32
typ.
0.2
0.4
11
14
13
24
1
9
9
max.
0.5
2010-05-20
BFR360F
-
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dBm