BFR 360F H6327 Infineon Technologies, BFR 360F H6327 Datasheet - Page 2

• Manufacturer Part Number: BFR 360F H6327
• Description: TRANS RF NPN 6V 35MA TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 360F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1dB @ 1.8GHz
• Gain: 15.5dB
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 15mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR360FH6327XT

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
V
Verified by random sampling
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
C
C
CE
CE
CB
EB
= 1 mA, I
= 15 mA, V
= 1 V, I
= 4 V, V
= 10 V, V
= 4 V, I
B
C
E
BE
= 0
= 0
= 0
CE
BE
= 0
= 3 V, pulse measured
= 0, T
A
= 85°C
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
90
6
-
-
-
-
Values
typ.
120
9
1
2
1
1
max.
500
160
30
50
30
2010-05-20
BFR360F
-
Unit
V
nA
-