BFR 360F H6327 Infineon Technologies, BFR 360F H6327 Datasheet

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BFR 360F H6327

Manufacturer Part Number
BFR 360F H6327
Description
TRANS RF NPN 6V 35MA TSFP-3
Manufacturer
Infineon Technologies
Datasheet

Specifications of BFR 360F H6327

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
9V
Frequency - Transition
14GHz
Noise Figure (db Typ @ F)
1dB @ 1.8GHz
Gain
15.5dB
Power - Max
210mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 15mA, 3V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Package / Case
TSFP-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR360FH6327XT
NPN Silicon RF Transistor
• Low noise amplifier for low current applications
• Collector design supports 5V supply voltage
• For oscillators up to 3.5 GHz
• Low noise figure 1.0 dB at 1.8 GHz
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD ( E lectro s tatic d ischarge) sensitive device, observe handling precaution!
Type
BFR360F
Maximum Ratings at T
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
S
≤ 98°C
thJA
please refer to Application Note AN077 Thermal Resistance
1)
A
2)
= 25 °C, unless otherwise specified
Marking
FBs
1 = B
1
Symbol
V
V
V
V
I
I
P
T
T
Symbol
R
Pin Configuration
C
B
CEO
CES
CBO
EBO
tot
J
Stg
thJS
2 = E
3 = C
-55 ... 150
Value
Value
≤ 250
210
150
15
15
35
3
6
2
4
Package
TSFP-3
1
2010-05-20
BFR360F
2
Unit
V
mA
mW
°C
Unit
K/W

Related parts for BFR 360F H6327

BFR 360F H6327 Summary of contents

Page 1

NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage • For oscillators up to 3.5 GHz • Low noise figure 1 1.8 GHz • Pb-free (RoHS compliant) package ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

Page 4

Total power dissipation P 240 mW 180 150 120 Third order Intercept Point IP =50 Ω ) (Output parameter 1.8GHz CE 30 ...

Page 5

Power gain 0.9GHz V = parameter ƒ (f) Power Gain ...

Page 6

Power Gain |² = ƒ parameter 15mA Noise figure NF ...

Page 7

Source impedance for min. noise figure vs. frequency +j50 +j25 +j10 2.4GHz 1.8GHz 3GHz 4GHz -j10 -j25 -j50 +j100 0.9GHz 100 3mA 15mA -j100 7 BFR360F 2010-05-20 ...

Page 8

SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. 8 BFR360F 2010-05-20 ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-3 1.2 ±0.05 0.2 0.55 ±0.05 ±0. 0.2 0.15 ±0.05 0.4 ±0.05 0.4 ...

Page 10

Datasheet Revision History: 20 May 2010 This datasheet replaces the revision from 30 March 2007. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been ...

Page 11

... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...

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