BFR 360F H6327 Infineon Technologies, BFR 360F H6327 Datasheet - Page 10

• Manufacturer Part Number: BFR 360F H6327
• Description: TRANS RF NPN 6V 35MA TSFP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 360F H6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (db Typ @ F): 1dB @ 1.8GHz
• Gain: 15.5dB
• Power - Max: 210mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 15mA, 3V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: TSFP-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR360FH6327XT

Datasheet Revision History: 20 May 2010
This datasheet replaces the revision from 30 March 2007.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet has been expanded
and updated.
Previous Revision: 30 March 2007
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Subject (changes since last revision)
Datasheet has final status
Max. ratings refer to 25°C
Max. rating for T
Lower max. rating for storage temperature T
Typical values for leakage currents included, maximum leakage current values
reduced
Characteristic curve for NFmin vs. frequency included
A
removed
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Stg
changed
2010-05-20
BFR360F