BFR93AR,215 NXP Semiconductors, BFR93AR,215 Datasheet - Page 5

• Manufacturer Part Number: BFR93AR,215
• Description: TRANS NPN 35MA 12V 6GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR93AR,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 6GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 5V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 40 @ 30 mA @ 5 V
• Dc Current Gain Hfe Max: 40 @ 30mA @ 5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 6000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.035 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933653660215; BFR93AR T/R; BFR93AR T/R

NXP Semiconductors
BFR93AR_1
Product data sheet
Fig 4. Collector capacitance as a function of
Fig 6. Gain as a function of collector current; typical
(pF)
C
c
gain
(dB)
0.8
0.6
0.4
0.2
30
20
10
1
0
0
I
collector-base voltage; typical values
V
values
E
0
0
CE
= i
= 8 V; f = 500 MHz.
e
= 0 mA; f = 1 MHz; T
10
4
20
8
j
= 25 C.
12
30
MSG
G
I
V
UM
C
CB
(mA)
mbb252
mbb255
(V)
Rev. 01 — 30 November 2006
16
40
Fig 5. Transition frequency as a function of collector
Fig 7. Gain as a function of collector current; typical
(GHz)
f
gain
(dB)
T
30
20
10
4
8
6
2
0
0
V
current; typical values
V
values
0
0
CE
CE
= 2 V; f = 500 MHz; T
= 8 V; f = 1 GHz.
10
10
NPN 6 GHz wideband transistor
20
20
j
= 25 C.
BFR93AR
30
30
© NXP B.V. 2006. All rights reserved.
G
MSG
I
UM
I
C
C
mbb256
mcd089
(mA)
(mA)
40
40
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