SS9018GBU Fairchild Semiconductor, SS9018GBU Datasheet

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SS9018GBU

Manufacturer Part Number
SS9018GBU
Description
TRANSISTOR RF NPN 30V 50MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SS9018GBU

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
1.1GHz
Power - Max
400mW
Dc Current Gain (hfe) (min) @ Ic, Vce
72 @ 1mA, 5V
Current - Collector (ic) (max)
50mA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
©2002 Fairchild Semiconductor Corporation
AM/FM Amplifier, Local Oscillator of
FM/VHF Tuner
• High Current Gain Bandwidth Product f
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
h
V
C
f
C
CBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
ob
CBO
CEO
EBO
Symbol
(sat)
Classification
Classification
h
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
FE
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
28 ~ 45
D
T
T
=1.1 GHz (Typ)
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
39 ~ 60
E
SS9018
I
I
I
V
V
I
V
f=1MHz
V
C
C
E
C
CB
CE
CB
CE
=100 A, I
=100 A, I
=1.0mA, I
=10mA, I
=12V, I
=5V, I
=10V, I
=5V, I
Test Condition
54 ~ 80
C
C
E
B
E
=1.0mA
=5mA
E
B
C
F
=0
=1mA
=0
=0
=0
=0
72 ~ 108
G
1. Emitter 2. Base 3. Collector
1
Min.
700
30
15
28
5
-55 ~ 150
Ratings
400
150
30
15
50
5
97 ~ 146
1100
Typ.
100
1.3
H
TO-92
Max.
198
0.5
1.7
50
Rev. A4, November 2002
132 ~ 198
Units
mW
mA
V
V
V
C
C
I
Units
MHz
nA
pF
V
V
V
V

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SS9018GBU Summary of contents

Page 1

... CBO h Emitter Cut-off Current FE V (sat) Collector-Emitter Saturation Voltage CE C Output Capacitance ob f Current Gain Bandwidth Product T h Classification FE Classification ©2002 Fairchild Semiconductor Corporation SS9018 =1.1 GHz (Typ =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I =100 =1.0mA ...

Page 2

... CE Figure 1. Static Characteristic 10 V (sat (sat) CE 0.1 0.01 0 [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 0 [mA], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation 1000 100 0 [mA], COLLECTOR CURRENT C Figure 2. DC current Gain ...

Page 3

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A4, November 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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