BFR 740L3RH E6327 Infineon Technologies, BFR 740L3RH E6327 Datasheet - Page 6

• Manufacturer Part Number: BFR 740L3RH E6327
• Description: TRANS RF BIPO NPN 30MA TSLP-3
• Manufacturer: Infineon Technologies

Specifications of BFR 740L3RH E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.7V
• Frequency - Transition: 42GHz
• Noise Figure (db Typ @ F): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
• Gain: 24.5dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 25mA, 3V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Package / Case: TSLP-3-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR740L3RHE6327INTR; BFR740L3RHE6327XT; SP000252393

Power gain G
I
f = parameter
Noise figure F = ƒ (I
V
C
CE
= 25 mA
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
36
32
28
24
20
16
12
= 3V, f = 1.8 GHz
2
1
0
8
4
0
0
0
0.5
5
1
ma
1.5
10
, G
Z
Z
S
S
= 50Ω
= Z
2
ms
C
Sopt
V
I
c
)
CE
2.5
15
[mA]
= ƒ (V
[V]
3
20
CE
3.5
)
4
0.90GHz
1.80GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
25
4.5
30
5
6
Minimum noise figure NF
V
Z
Minimum noise figure NF
V
S
CE
CE
= Z
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
= 3 V, f = parameter
2
1
0
= 3V, Z
0
Sopt
5
S
f = 6GHz
f = 5GHz
f = 4GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
= Z
10
Sopt
I
c
15
[mA]
min
min
BFR740L3RH
20
= ƒ (I
= ƒ (f)
2010-09-08
25
C
)
30